Nanya NT5AD512M16C4-JR DDR4 8Gb SDRAM Datasheet
This page provides the comprehensive technical specifications and reference datasheet for the Nanya NT5AD512M16C4-JR memory chip. This high-speed, standard DDR4 SDRAM component is optimized for consumer electronics, industrial automation, networking systems, and smart IoT devices.
π Technical Inquiry & Reference
- π₯ Download Nanya NT5AD512M16C4-JR PDF Datasheet
- For bulk inquiries, price sheets, or custom packaging details, please refer to our reference page:
π SMC NT5AD512M16C4-JR Reference Page - Direct link for technical specification lookup: https://www.sourcememorychips.com/products/nt5ad512m16c4-jr
1. Technical Specifications
- Brand: Nanya (εδΊη§ζ)
- Part Number: NT5AD512M16C4-JR
- Memory Technology: DDR4 SDRAM (Commercial Grade)
- Density: 8 Gb (Gigabit)
- Organization: 512M x 16 (512M words x 16 bits)
- Memory Speed: Up to 3200 Mbps (DDR4-3200)
- CL-tRCD-tRP: 22-22-22
- Operating Voltage: 1.2 V (Standard low voltage)
- Operating Temperature: 0Β°C to 95Β°C
- Package: 96-ball FBGA (TFBGA-96)
2. Key Product Features
- Standard Compliance: Fully compliant with JEDEC DDR4 standard base specifications.
- 8n Prefetch Architecture: Features high-speed internal pipelines for maximum memory access bandwidth.
- On-Die Calibration: Internal VREFDQ training and ZQ calibration ensure signal integrity and impedance accuracy under full-load environments.
- Data Integrity: Built-in Auto Self Refresh (ASR) via temperature sensor and write CRC error detection.
3. Package Pinout & Dimensions
(Please refer to the original Nanya FBGA-96 mechanical drawing on the SMC official portal for exact packaging footprints.)
Disclaimer: All specifications are based on standard Nanya documentation. For lead times, MOQ, or tape-and-reel packaging specifications, please consult Source Memory Chips.